ELECTRICAL CHARACTERIZATION OF HIGH-PURITY INGAASP ALLOYS

被引：2

作者：

BENCHIMOL, JL

SCALBERT, D

QUILLEC, M

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1985年 / 14卷 / 06期

关键词：

D O I：

10.1007/BF02654303

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

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页码：655 / 666

页数：12

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共 16 条

[1] IMPROVED MOBILITY IN INXGA1-XASYP1-Y ALLOYS USING HIGH-TEMPERATURE LIQUID-PHASE EPITAXY
BENCHIMOL, JL
QUILLEC, M
SLEMPKES, S
[J]. JOURNAL OF CRYSTAL GROWTH, 1983, 64 (01) : 96 - 100
[2] LPE AND VPE IN1-XGAXASYP1-Y-INP - TRANSPORT-PROPERTIES, DEFECTS, AND DEVICE CONSIDERATIONS
BHATTACHARYA, PK
KU, JW
OWEN, SJT
OLSEN, GH
CHIAO, SH
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (02) : 150 - 161
[3] BACKGROUND CARRIER CONCENTRATION AND ELECTRON-MOBILITY IN LPE IN1-XGAXASYP1-Y LAYERS
GREENE, PD
WHEELER, SA
ADAMS, AR
ELSABBAHY, AN
AHMAD, CN
[J]. APPLIED PHYSICS LETTERS, 1979, 35 (01) : 78 - 80
[4] COMPOSITION MODULATION IN LIQUID-PHASE EPITAXIAL INXGA1-XASYP1-Y LAYERS LATTICE MATCHED TO INP SUBSTRATES
HENOC, P
IZRAEL, A
QUILLEC, M
LAUNOIS, H
[J]. APPLIED PHYSICS LETTERS, 1982, 40 (11) : 963 - 965
[5] LELOUP J, 1978, J APPL PHYS, V49, P3359, DOI 10.1063/1.325211
[6] MARSH JH, 1981, I PHYS C SER, V56, P621
[7] THE THEORY OF IMPURITY CONDUCTION
MOTT, NF
TWOSE, WD
[J]. ADVANCES IN PHYSICS, 1961, 10 (38) : 107 - 163
[8] ELECTRICAL PROPERTIES OF N-NORMAL TYPE GALLIUM ARSENIDE
OLIVER, DJ
[J]. PHYSICAL REVIEW, 1962, 127 (04): : 1045 - &
[9] PHOTO-LUMINESCENCE AND IMPURITY CONCENTRATION IN GAXIN1-XASYP1-Y ALLOYS LATTICE-MATCHED TO INP
PEARSALL, TP
EAVES, L
PORTAL, JC
[J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (02) : 1037 - 1047
[10] IMPACT IONIZATION OF EXCITONS AND SHALLOW DONORS IN INP
SKROMME, BJ
STILLMAN, GE
[J]. PHYSICAL REVIEW B, 1983, 28 (08): : 4602 - 4607