THIN SIO2-FILMS NITRIDED BY RAPID THERMAL-PROCESSING IN NH3 OR N2O FOR APPLICATIONS IN EEPROMS

被引：10

作者：

DUTOIT, M

BOUVET, D

MI, J

NOVKOVSKI, N

LETOURNEAU, P

机构：

[1] Institute for Micro- and Optoelectronics, Swiss Federal Institute of Technology

来源：

MICROELECTRONICS JOURNAL | 1994年 / 25卷 / 07期

关键词：

D O I：

10.1016/0026-2692(94)90039-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin silicon dioxide (SiO2) films nitrided by rapid thermal processing (RTP) in ammonia and nitrous oxide are compared. Their electrical characteristics (oxide and interface trapped charge densities, resistance to high-field stress, breakdown charge) are correlated with the concentration of nitrogen at the Si/SiO2 interface. An optimum in several parameters is found for very light nitridations (0.5-1 at.% N). In this case, a significant improvement in the reliability of non-volatile memories (EEPROMs) is anticipated.

引用

页码：539 / 551

页数：13

共 37 条

[1] FURNACE NITRIDATION OF THERMAL SIO2 IN PURE N2O AMBIENT FOR ULSI MOS APPLICATIONS [J].