NITRIDATION OF THIN SIO2-FILMS IN N2 AND NH3 PLASMAS

被引：10

作者：

FAZAN, P

DUTOIT, M

ILEGEMS, M

机构：

来源：

APPLIED SURFACE SCIENCE | 1987年 / 30卷 / 1-4期

关键词：

D O I：

10.1016/0169-4332(87)90097-3

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

引用

页码：224 / 228

页数：5

共 8 条

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[8] LOW-PRESSURE NITRIDED-OXIDE AS A THIN GATE DIELECTRIC FOR MOSFETS [J].

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