ANODIC NITRIDATION OF SILICON AND SILICON DIOXIDE

被引：13

作者：

WONG, SS

OLDHAM, WG

机构：

[1] HEWLETT PACKARD LABS,PALO ALTO,CA 94304

[2] UNIV CALIF BERKELEY,DEPT ELECT ENGN & COMP SCI,BERKELEY,CA 94720

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1985年 / 32卷 / 05期

关键词：

D O I：

10.1109/T-ED.1985.22056

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：978 / 982

页数：5

共 24 条

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