CHARACTERISTICS OF THERMALLY NITRIDED SILICON DIOXIDE FILM AND PLASMA ENHANCEMENT

被引：15

作者：

KATO, I

ITO, T

NAKAMURA, T

ISHIKAWA, H

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1984年 / 13卷 / 06期

关键词：

D O I：

10.1007/BF02655307

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：913 / 929

页数：17

共 11 条

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