EPITAXIAL-GROWTH OF GAAS1-XPX(0 LESS-THAN X LESS-THAN 0.6) BY OM-CVD FROM THE COMPLEX CLET2GA.ASET3 AND DIETHYL PHOSPHINE - A SOURCE OF THE ORIGINAL PHOSPHORUS HPET2

被引：13

作者：

MAURY, F

CONSTANT, G

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1983年 / 62卷 / 03期

关键词：

D O I：

10.1016/0022-0248(83)90401-3

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：568 / 576

页数：9

共 18 条

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