NEW TECHNIQUES FOR STUDY OF GUNN DIODE CONTACTS

被引：6

作者：

GURNEY, WSC ^{[1
]}

ORTON, JW ^{[1
]}

机构：

[1] MULLARD RES LABS,REDHILL,SURREY,ENGLAND

来源：

SOLID-STATE ELECTRONICS | 1974年 / 17卷 / 07期

关键词：

D O I：

10.1016/0038-1101(74)90099-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：743 / 750

页数：8

共 24 条

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[8] FREQUENCY/TEMPERATURE CHARACTERISTICS OF GUNN DEVICES [J].

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[9] EFFECT OF CONTACT RESISTANCE ON GUNN-DIODE RISETIMES [J].

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ELECTRONICS LETTERS, 1972, 8 (24) :596-&

[10] EXACT SOLUTION OF LINEARIZED BOLTZMANN-EQUATION WITH APPLICATIONS TO HALL-MOBILITY AND HALL FACTOR OF GAAS [J].

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