GUNN DIODES WITH IMPROVED FREQUENCY-STABILITY/TEMPERATURE VARIATIONS

被引：9

作者：

BIRD, J

BOLTON, RMG

EDRIDGE, AL

DESA, BAE

HOBSON, GS

机构：

来源：

ELECTRONICS LETTERS | 1971年 / 7卷 / 11期

关键词：

D O I：

10.1049/el:19710207

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：299 / +

页数：1

共 8 条

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[2] EFFECTS OF TEMPERATURE ON CONTACT RESISTANCE OF GUNN DIODES [J].

BOLTON, RMG ;

JONES, BF .

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[3] OHMIC CONTACTS TO SOLUTION-GROWN GALLIUM ARSENIDE [J].

HARRIS, JS ;

NANNICHI, Y ;

PEARSON, GL .

JOURNAL OF APPLIED PHYSICS, 1969, 40 (11) :4575-&

[4] AN AUTOMATIC EQUIPMENT FOR RECORDING FREQUENCY VARIATION OF X-BAND OSCILLATORS WITH TEMPERATURE OVER RANGE-40 TO +70 DEGREES C WITH PARTICULAR REFERENCE TO GUNN OSCILLATORS [J].

HOBSON, GS ;

WARNER, FL .

RADIO AND ELECTRONIC ENGINEER, 1970, 39 (06) :316-+

[5] MEASUREMENT OF VARIATION OF FREQUENCY WITH AMBIENT TEMPERATURE OF MICROWAVE SEMICONDUCTOR OSCILLATORS [J].

HOBSON, GS .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1970, 3 (10) :801-&

[6] PREPARATION OF HIGH PURITY GALLIUM ARSENIDE BY VAPOUR PHASE EPITAXIAL GROWTH [J].

KNIGHT, JR ;

EFFER, D ;

EVANS, PR .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :178-&

[7] SOME ASPECTS OF GUNN EFFECT OSCILLATORS [J].

ROBSON, PN ;

MAHROUS, SM .

RADIO AND ELECTRONIC ENGINEER, 1965, 30 (06) :345-&

[8]

WARNER FL, 1970, MICROWAVE J, V13, P46

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