SURFACE-TOPOGRAPHY AND COMPOSITION OF INP(100) AFTER VARIOUS SULFUR PASSIVATION TREATMENTS

被引:11
作者
GAO, LJ [1 ]
ANDERSON, GW [1 ]
ESPOSTO, F [1 ]
NORTON, PR [1 ]
MASON, BF [1 ]
LU, ZH [1 ]
GRAHAM, MJ [1 ]
机构
[1] NATL RES COUNCIL CANADA,INST MICROSTRUCT SCI,OTTAWA,ON K1A 0R6,CANADA
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 05期
关键词
D O I
10.1116/1.588132
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
InP(100) surfaces were S passivated in S2Cl2, (NH4)(2)S and sulfide-containing Br-2 solutions. After S2Cl2 treatments, observations using atomic force microscopy indicated that the sample surface was rougher than the as-received sample. Some residual oxide was also identified by Auger electron spectroscopy and x-ray photoelectron spectroscopy analysis. Treatment of InP(100) in (NH4)(2)S and Br-2/MeOH solutions containing trace amounts of S2Cl2 and (NH4)(2)S significantly reduced the surface roughness of the as-received sample. These treated surfaces were also found to be free of oxide and S passivated. These solutions therefore effectively removed the native oxide leaving substrates approaching atomic flatness and subsequently passivated surfaces with sulfur from the solution. (C) 1995 American Vacuum Society.
引用
收藏
页码:2053 / 2056
页数:4
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