CURRENT TRANSPORT ACROSS A GRAIN-BOUNDARY IN POLYCRYSTALLINE SEMICONDUCTORS

被引：17

作者：

LU, CY ^{[1
]}

LU, NCC ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

SOLID-STATE ELECTRONICS | 1983年 / 26卷 / 06期

关键词：

D O I：

10.1016/0038-1101(83)90170-3

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：549 / 557

页数：9

共 39 条

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[5]

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[8] RICHARDSON CONSTANT AND TUNNELING EFFECTIVE MASS FOR THERMIONIC AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIER DIODES [J].

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[9] CURRENT TRANSPORT IN METAL SEMICONDUCTOR CONTACTS - UNIFIED APPROACH [J].

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[10]

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