MOLECULAR-BEAM EPITAXIAL-GROWTH OF IN1-XGAXAS1-YSBY LATTICE MATCHED TO GASB

被引：53

作者：

TSANG, WT

CHIU, TH

KISKER, DW

DITZENBERGER, JA

机构：

[1] AT&T Bell Lab, Murray Hill, NJ,, USA, AT&T Bell Lab, Murray Hill, NJ, USA

来源：

APPLIED PHYSICS LETTERS | 1985年 / 46卷 / 03期

关键词：

D O I：

10.1063/1.95659

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

CRYSTALS

引用

页码：283 / 285

页数：3

共 14 条

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[4]

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[6]

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[8] PSEUDO-QUATERNARY PHASE-DIAGRAM CALCULATION OF IN1-XGAXAS1-YSBY QUATERNARY SYSTEM [J].

KOBAYASHI, N ;

HORIKOSHI, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1982, 21 (01) :201-202

[9] LIQUID-PHASE EPITAXIAL-GROWTH OF INGAASSB-GASB AND INGAASSB-ALGAASSB DH WAFERS [J].

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[10] PSEUDO-QUATERNARY PHASE-DIAGRAM OF GA-IN-AS-SB SYSTEM [J].

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