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PIEZORESISTIVE PROPERTIES OF POLYSILICON FILMS

被引：40
作者：
GRIDCHIN, VA
LUBIMSKY, VM
SARINA, MP
机构：
[1] Department of Applied Physics, Novosibirsk State Technical University, Novosibirsk
来源：
SENSORS AND ACTUATORS A-PHYSICAL | 1995年 / 49卷 / 1-2期
关键词：
PIEZORESISTANCE; POLYCRYSTALLINE FILMS;
D O I：
10.1016/0924-4247(95)01013-Q
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A simple theoretical model for calculating the longitudinal, transverse and shear gauge factors of highly doped polycrystalline silicon films is presented. The calculation of the gauge factors is performed in terms of the elastoresistance and stiffness coefficients of monocrystalline silicon. The results for the longitudinal and transverse gauge factors are given in analytical form for [100], [110] and [111] films. Boron-doped polycrystalline silicon films have been investigated in the temperature range -190 to +300 degrees C and the concentration range 7 x 10(19)- 1 x 10(20) cm(-3). The presented theory is helpful for polycrystalline transducer designers.
引用
收藏
页码：67 / 72
页数：6
相关论文
共 16 条
[1]   POLYCRYSTALLINE SILICON-ON-METAL STRAIN-GAUGE TRANSDUCERS [J].
ERSKINE, JC .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :796-801
[2]   POLYCRYSTALLINE SILICON AS A STRAIN-GAUGE MATERIAL [J].
FRENCH, PJ ;
EVANS, AGR .
JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1986, 19 (12) :1055-1058
[3]   PIEZORESISTANCE IN POLYSILICON AND ITS APPLICATIONS TO STRAIN-GAUGES [J].
FRENCH, PJ ;
EVANS, AGR .
SOLID-STATE ELECTRONICS, 1989, 32 (01) :1-10
[4]  
GRANVEAUD M, 1967, ONDE ELECTR, V47, P392
[5]   POLYSILICON STRAIN-GAUGE TRANSDUCERS [J].
GRIDCHIN, VA ;
LUBIMSKYI, VM ;
SARINA, MP .
SENSORS AND ACTUATORS A-PHYSICAL, 1992, 30 (03) :219-223
[6]  
GRIDCHIN VA, 1989, PHYS ELECTRON, V39, P69
[7]   STRUCTURE AND PROPERTIES OF LPCVD SILICON FILMS [J].
KAMINS, TI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (03) :686-690
[8]   STATISTICAL-MODEL FOR PIEZORESISTANCE IN THIN-FILMS [J].
KANDA, Y ;
SUZUKI, K .
APPLIED SURFACE SCIENCE, 1988, 33-4 :996-1000
[9]   MODELING AND OPTIMIZATION OF MONOLITHIC POLYCRYSTALLINE SILICON RESISTORS [J].
LU, NCC ;
GERZBERG, L ;
LU, CY ;
MEINDL, JD .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1981, 28 (07) :818-830
[10]   PIEZORESISTIVE PRESSURE SENSORS BASED ON POLYCRYSTALLINE SILICON [J].
MOSSER, V ;
SUSKI, J ;
GOSS, J ;
OBERMEIER, E .
SENSORS AND ACTUATORS A-PHYSICAL, 1991, 28 (02) :113-132
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