POST-DEPOSITION HIGH-TEMPERATURE PROCESSING OF SILICON-NITRIDE

被引：38

作者：

STEIN, HJ

PEERCY, PS

SOKEL, RJ

机构：

来源：

THIN SOLID FILMS | 1983年 / 101卷 / 04期

关键词：

D O I：

10.1016/0040-6090(83)90096-2

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：291 / 298

页数：8

共 11 条

[1]

Gaydon A. G., 1953, DISSOCIATION ENERGIE

[2]

Harrick N.J., 1967, INTERNAL REFLECTION

[3] DEUTERIUM PASSIVATION OF GRAIN-BOUNDARY DANGLING BONDS IN SILICON THIN-FILMS [J].

JOHNSON, NM ;

BIEGELSEN, DK ;

MOYER, MD .

APPLIED PHYSICS LETTERS, 1982, 40 (10) :882-884

[4] HYDROGEN CONCENTRATION PROFILES AND CHEMICAL BONDING IN SILICON-NITRIDE [J].

PEERCY, PS ;

STEIN, HJ ;

DOYLE, BL ;

PICRAUX, ST .

JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (01) :11-24

[5] EFFECT OF DISORDER ON THE HYDROGEN CONTENT IN SI [J].

PEERCY, PS ;

STEIN, HJ ;

GINLEY, DS .

APPLIED PHYSICS LETTERS, 1980, 36 (08) :678-680

[6] HIGH-TEMPERATURE HYDROGEN ANNEAL OF MNOS STRUCTURES [J].

SCHOLS, G ;

MAES, H ;

DECLERCK, G ;

VANOVERSTRAETEN, R .

REVUE DE PHYSIQUE APPLIQUEE, 1978, 13 (12) :825-828

[7] THE MECHANISM OF N-H BOND DECOMPOSITION IN SILICON-NITRIDE FILMS [J].

SMIRNOVA, TP ;

BELYI, VI ;

CHRAMOVA, LV .

THIN SOLID FILMS, 1980, 74 (02) :287-293

[8] CHEMICALLY BOUND HYDROGEN IN CVD SI3N4 - DEPENDENCE ON NH3/SIH4 RATIO AND ON ANNEALING [J].

STEIN, HJ ;

WEGENER, HAR .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1977, 124 (06) :908-912

[9]

STEIN HJ, 1980, PHYSICS MOS INSULATO, P147

[10]

TOPICH JA, 1977, ELECTROCHEMICAL SOC, V77, P323

← 1 2 →