EFFECT OF EXCESS SILICON ON BEHAVIOR OF LPCVD WSIX FILMS ON SILICON

被引：7

作者：

JOSHI, RV ^{[1
]}

KIM, YH ^{[1
]}

WETZEL, JT ^{[1
]}

LIN, T ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

THIN SOLID FILMS | 1988年 / 163卷

关键词：

D O I：

10.1016/0040-6090(88)90434-8

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：267 / 272

页数：6

共 10 条

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[8] ANALYSIS OF STRESS IN CHEMICAL VAPOR-DEPOSITION TUNGSTEN SILICIDE FILM [J].

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[9] PROPERTIES OF TUNGSTEN SILICIDE FILM ON POLYCRYSTALLINE SILICON [J].

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