TIME-DEPENDENT HALL-EFFECT ANALYSIS METHOD USED FOR INVESTIGATION OF THE DX CENTER IN ALGAAS-SI

被引：5

作者：

BRUNTHALER, G ^{[1
]}

STOGER, G ^{[1
]}

AUMAYR, A ^{[1
]}

KOHLER, K ^{[1
]}

机构：

[1] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1993年 / 62卷 / 14期

关键词：

D O I：

10.1063/1.108610

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A new time-dependent Hall effect analysis method is demonstrated on the DX center in AlGaAs:Si. Due to the time dependence of the carrier concentration and the mobility in the metastable temperature region of the DX center, errors are usually made in a standard estimation of the Hall effect values. By using an interpolation method for the individual measured voltages, we are able to omit these errors and also to explain them by a linear error approximation. We present mobility data and show that correlation effects between DX centers are important.

引用

页码：1635 / 1637

页数：3

共 9 条

[1] MULTICOMPONENT STRUCTURE IN THE TEMPERATURE-DEPENDENT PERSISTENT PHOTOCONDUCTIVITY DUE TO DIFFERENT DX CENTERS IN ALXGA1-XAS-SI [J].

BRUNTHALER, G ;

KOHLER, K .

APPLIED PHYSICS LETTERS, 1990, 57 (21) :2225-2227

[2]

BRUNTHALER G, 1992, MATER SCI FORUM, V83, P823, DOI 10.4028/www.scientific.net/MSF.83-87.823

[3] LARGE-LATTICE-RELAXATION MODEL FOR PERSISTENT PHOTOCONDUCTIVITY IN COMPOUND SEMICONDUCTORS [J].

LANG, DV ;

LOGAN, RA .

PHYSICAL REVIEW LETTERS, 1977, 39 (10) :635-639

[4] DEEP DONOR LEVELS (DX CENTERS) IN III-V SEMICONDUCTORS [J].

MOONEY, PM .

JOURNAL OF APPLIED PHYSICS, 1990, 67 (03) :R1-R26

[5]

MORGAN TN, 1989, DEFECTS SEMICONDUCTO, V15, P1079

[6]

SEEGER K, 1985, SEMICONDUCTOR PHYSIC, V40

[7]

van der Pauw L. J., 1958, PHILIPS RES REP, V13, P1

[8] DX CENTERS AND COULOMB POTENTIAL FLUCTUATIONS [J].

WILAMOWSKI, Z ;

KOSSUT, J ;

JANTSCH, W ;

OSTERMAYER, G .

SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (10B) :B38-B46

[9]

WILAMOWSKI Z, 1992, MATER SCI FORUM, V83, P805, DOI 10.4028/www.scientific.net/MSF.83-87.805

← 1 →