MULTICOMPONENT STRUCTURE IN THE TEMPERATURE-DEPENDENT PERSISTENT PHOTOCONDUCTIVITY DUE TO DIFFERENT DX CENTERS IN ALXGA1-XAS-SI

被引：19

作者：

BRUNTHALER, G

KOHLER, K

机构：

[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY

[2] FRAUNHOFER INST APPL SOLID STATE PHYS,W-7800 FREIBURG,GERMANY

来源：

APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 21期

关键词：

D O I：

10.1063/1.103898

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The persistent photoconductivity of Si-doped AlGaAs has been investigated by temperature-dependent resistance and Hall effect measurements. After illuminating the samples at low temperature, we observe for the first time distinct structures in the temperature-dependent carrier concentration during the subsequent heating process. These structures are interpreted in terms of the existence of different DX levels below the conduction-band edge.

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页码：2225 / 2227

页数：3

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