CONDUCTION-BAND STRUCTURE DEPENDENCE OF PERSISTENT PHOTOCONDUCTIVITY IN SI-DOPED ALXGA1-XAS STUDIED BY HALL MEASUREMENTS UNDER HYDROSTATIC-PRESSURE

被引：9

作者：

GOUTIERS, B

GREGORIS, G

LAVIELLE, D

PORTAL, JC

CHAND, N

机构：

[1] CNRS,SNCI,F-38042 GRENOBLE,FRANCE

[2] AT&T BELL LABS,MURRAY HILL,NJ 07974

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 11期

关键词：

D O I：

10.1063/1.101677

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1124 / 1126

页数：3

共 14 条

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