HIGH-PERFORMANCE LOW-TEMPERATURE POLYSILICON THIN-FILM-TRANSISTOR USING ECR PLASMA THERMAL OXIDE AS GATE INSULATOR

被引：22

作者：

LEE, JY ^{[1
]}

HAN, CH ^{[1
]}

KIM, CK ^{[1
]}

机构：

[1] HYUNDAI ELECTR IND CO LTD,SEMICOND RES & DEV LAB,KYONGGI DO,SOUTH KOREA

来源：

IEEE ELECTRON DEVICE LETTERS | 1994年 / 15卷 / 08期

关键词：

D O I：

10.1109/55.296223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron cyclotron resonance (ECR) plasma thermal oxide has been investigated as a gate insulator for low temperature (less-than-or-equal-to 600-degrees-C) polysilicon thin-film transistors based on solid phase crystallization (SPC) method. The ECR plasma thermal oxide films grown on polysilicon film has relatively smooth interface with polysilicon film when compared with the conventional thermal oxide and it shows good electrical characteristics. The fabricated poly-Si TFT's without plasma hydrogenation exhibit a field-effect mobilities of 80 (60) cm2 /V . s for n-channel and 69 (48) cm2/V . s for p-channel respectively when using Si2H6 (SiH4) source gas for the deposition of active poly-Si film.

引用

页码：301 / 303

页数：3

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