OPTICAL CONTROL OF GAASSB INGAAS STAGGERED RESONANT TUNNELING BARRIER STRUCTURES GROWN BY MBE

被引：2

作者：

INATA, T

NAKATA, Y

MUTO, S

机构：

[1] Fujitsu Labs. Ltd., Kanagawa

来源：

SEMICONDUCTOR SCIENCE AND TECHNOLOGY | 1992年 / 7卷 / 3B期

关键词：

D O I：

10.1088/0268-1242/7/3B/121

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A GaAsSb(8.50 nm)/InGaAs(4.40 nm)/InAlAs(5.27 nm) staggered resonant tunnelling barrier structure, lattice-matched to InP, has been grown by MBE and a strong illumination effect on its current-voltage characteristics has been observed at room temperature. The peak current density increased by 40% and the peak voltage shifted by -75mV at an excitation power density of 30 W cm-2. We attributed these effects to the holes accumulated in the GaAsSb layer which acts as a deep quantum well, trapping the holes.

引用

页码：B465 / B467

页数：3

共 6 条

[1] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].