ACTIVE-TO-PASSIVE TRANSITION AND BUBBLE FORMATION FOR HIGH-TEMPERATURE OXIDATION OF CHEMICALLY VAPOR-DEPOSITED SILICON-CARBIDE IN CO-CO2 ATMOSPHERE

被引：27

作者：

NARUSHIMA, T ^{[1
]}

GOTO, T ^{[1
]}

YOKOYAMA, Y ^{[1
]}

TAKEUCHI, M ^{[1
]}

IGUCHI, Y ^{[1
]}

HIRAI, T ^{[1
]}

机构：

[1] TOHOKU UNIV,INST MAT RES,SENDAI,MIYAGI 980,JAPAN

来源：

JOURNAL OF THE AMERICAN CERAMIC SOCIETY | 1994年 / 77卷 / 04期

关键词：

D O I：

10.1111/j.1151-2916.1994.tb07273.x

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Oxidation behavior of chemically vapor-deposited SiC in CO-CO2 atmospheres (0.1 MPa) was investigated using a thermogravimetric technique at temperatures from 1823 to 1923 K. Active or passive oxidation was observed depending on temperature and CO2/CO partial pressure ratio (P(CO2)/P(CO)). The critical P(CO2)/P(CO) value for the transition was 10(2) times as large as a theoretical value calculated from the Wagner model. In the passive oxidation above 1873 K, SiO2 bubbles were grown. The expansion and rupture of bubbles caused cyclic rapid mass gain and mass loss.

引用

页码：1079 / 1082

页数：4

共 12 条

[1]

AINSLIE NG, 1962, S NUCLEATION CRYSTAL, P97

[2]

[Anonymous], METALLURGICAL THERMO

[3] VOLATILITY DIAGRAMS FOR SILICA, SILICON-NITRIDE, AND SILICON-CARBIDE AND THEIR APPLICATION TO HIGH-TEMPERATURE DECOMPOSITION AND OXIDATION [J].