FIELD-INDUCED TUNNEL-DIODE IN INDIUM-ANTIMONIDE

被引：11

作者：

MARGALIT, S ^{[1
]}

SHAPPIR, J ^{[1
]}

KIDRON, I ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,ELECT ENGN DEPT,HAIFA,ISRAEL

来源：

JOURNAL OF APPLIED PHYSICS | 1975年 / 46卷 / 09期

关键词：

D O I：

10.1063/1.322152

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

收藏

页码：3999 / 4001

页数：3

相关论文

共 7 条

[1] Grove A S, 1967, PHYS TECHNOLOGY SEMI
[2] INSULATED GATE TUNNEL JUNCTION TRIODE
HOFSTEIN, SR
WARFIELD, G
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1965, ED12 (02) : 66 - &
[3] THEORY OF TUNNELING
KANE, EO
[J]. JOURNAL OF APPLIED PHYSICS, 1961, 32 (01) : 83 - +
[4] A HIGH FIELD TRIODE
NATHANSO.HC
[J]. SOLID-STATE ELECTRONICS, 1965, 8 (04) : 349 - &
[5] MOSTS AT CRYOGENIC TEMPERATURES
ROGERS, CG
[J]. SOLID-STATE ELECTRONICS, 1968, 11 (11) : 1079 - &
[6] SELF-CONSISTENT RESULTS FOR N-TYPE SI INVERSION LAYERS
STERN, F
[J]. PHYSICAL REVIEW B, 1972, 5 (12): : 4891 - &
[7] WEINBERG ZA, UNPUBLISHED