ER/SI(111) INTERFACE INTERMIXING INVESTIGATION USING CORE LEVEL PHOTOEMISSION

被引:7
作者
HADERBACHE, L
WETZEL, P
PIRRI, C
PERUCHETTI, JC
BOLMONT, D
GEWINNER, G
机构
[1] Laboratoire de Physique et de Spectroscopie Electronique, Facult́e des Sciences et Techniques, 68093-Mulhouse Cédex
关键词
D O I
10.1063/1.103685
中图分类号
O59 [应用物理学];
学科分类号
摘要
We present in this letter Si 2p core level photoemission measurements on the Er/Si (111) interface formed at room temperature. These spectroscopic data are compared with those measured on amorphous silicide films for various Er concentrations grown by coevaporation of Er and Si species at room temperature under ultrahigh vacuum conditions. This study reveals a strong interaction between Er and the Si (111) substrate even at very low coverage. A mixed interface is observed with silicide formation up to 6 monolayers of deposited metal which corresponds to the onset of erbium metal overgrowth. The Er concentration in the interfacial silicide is found to increase as a function of the deposited Er thickness. A model for the interface is proposed and discussed.
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页码:341 / 343
页数:3
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