EFFECT OF HOT-ELECTRON STRESS ON LOW-FREQUENCY MOSFET NOISE

被引：29

作者：

PIMBLEY, JM

GILDENBLAT, G

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1984年 / 5卷 / 09期

关键词：

D O I：

10.1109/EDL.1984.25940

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：345 / 347

页数：3

共 9 条

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[7] HOT-ELECTRON LIMITED OPERATING VOLTAGES FOR 0.8-MU-M MOSFETS [J].

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[8] ROLE OF HOT-HOLE INJECTION IN HOT-CARRIER EFFECTS AND THE SMALL DEGRADED CHANNEL REGION IN MOSFETS [J].

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[9]

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