PNP GAAS/GE/GE PHOTOTRANSISTOR GROWN BY MOLECULAR-BEAM EPITAXY - IMPLICATIONS FOR BIPOLAR AND HOT-ELECTRON TRANSISTORS

被引：32

作者：

CHAND, N ^{[1
]}

KLEM, J ^{[1
]}

MORKOC, H ^{[1
]}

机构：

[1] UNIV ILLINOIS,COORDINATED SCI LAB,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 07期

关键词：

D O I：

10.1063/1.96483

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

15

引用

收藏

页码：484 / 486

页数：3

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[11] HETEROJUNCTION BAND DISCONTINUITY GROWTH SEQUENCE VARIATION AT COMPOUND SEMICONDUCTOR-GERMANIUM (110) INTERFACES - POSSIBLE ROLE OF ANTIPHASE DISORDER
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[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (02) : 266 - 274
[14] ULTRA LOW RESISTANCE OHMIC CONTACTS TO N-GAAS
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[J]. ELECTRONICS LETTERS, 1979, 15 (24) : 800 - 801
[15] SZE SM, 1981, PHYSICS SEMICONDUCTO