ON THE MECHANISM OF THERMALLY ASSISTED ION-INDUCED INTERFACE MIXING

被引：6

作者：

HORINO, Y ^{[1
]}

MATSUNAMI, N ^{[1
]}

MORITA, K ^{[1
]}

ITOH, N ^{[1
]}

WANG, ZL ^{[1
]}

机构：

[1] BEIJING NORMAL UNIV,INST LOW ENERGY PHYS,BEIJING,PEOPLES R CHINA

来源：

PHYSICS LETTERS A | 1984年 / 105卷 / 4-5期

关键词：

D O I：

10.1016/0375-9601(84)90410-9

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：248 / 250

页数：3

共 22 条

[1] ION-BEAM MIXING AT NICKEL-SILICON INTERFACES [J].

AVERBACK, RS ;

THOMPSON, LJ ;

MOYLE, J ;

SCHALIT, M .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) :1342-1349

[2] MARKER EXPERIMENTS FOR DIFFUSION IN THE SILICIDE DURING OXIDATION OF PDSI, PD2SI, COSI2, AND NISI2 FILMS ON [SI] [J].

BARTUR, M ;

NICOLET, MA .

JOURNAL OF APPLIED PHYSICS, 1983, 54 (09) :5404-5405

[3] DETERMINATION OF THE DIFFUSING SPECIES AND MECHANISM OF DIFFUSION DURING CRSI2 FORMATION, USING SI-31 AS A MARKER [J].

BOTHA, AP ;

PRETORIUS, R .

APPLIED PHYSICS LETTERS, 1982, 40 (05) :412-414

[4] INVESTIGATION ON TISI2 THIN-FILM OXIDATION BY RADIOACTIVE-TRACER TECHNIQUE [J].

CHEN, JR ;

LIU, YC ;

CHU, SD .

APPLIED PHYSICS LETTERS, 1982, 40 (03) :263-265

[5] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

CHU, WK ;

LAU, SS ;

MAYER, JW ;

MULLER, H .

THIN SOLID FILMS, 1975, 25 (02) :393-402

[6] DIFFUSION IN INTERMETALLIC COMPOUNDS WITH THE CAF2 STRUCTURE - A MARKER STUDY OF THE FORMATION OF NISI2 THIN-FILMS [J].

DHEURLE, F ;

PETERSSON, S ;

STOLT, L ;

STRIZKER, B .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (08) :5678-5681

[7]

HORINO Y, UNPUB

[8]

KAYANUMA T, 1979, APPL PHYS LETT, V35, P222

[9]

LAM NQ, 1975, RAD DAMAGE METALS, P125

[10] ION-BEAM MIXING IN AMORPHOUS-SILICON .2. THEORETICAL INTERPRETATION [J].

MATTESON, S ;

PAINE, BM ;

NICOLET, MA .

NUCLEAR INSTRUMENTS & METHODS, 1981, 182 (APR) :53-61

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