A PHOTO-LUMINESCENCE STUDY OF BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY - REPLY

被引：6

作者：

SCOTT, GB ^{[1
]}

DOBSON, PJ ^{[1
]}

DUGGAN, G ^{[1
]}

DAWSON, P ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1982年 / 53卷 / 09期

关键词：

D O I：

10.1063/1.331491

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：6469 / 6470

页数：2

共 8 条

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[3]

KUNZEL H, 1980, APPL PHYS LETT, V37, P416, DOI 10.1063/1.91927

[4]

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[5] LUMINESCENCE PROPERTIES OF GAAS-GA1-XALX AS DOUBLE HETEROSTRUCTURES AND MULTIQUANTUM-WELL SUPER-LATTICES GROWN BY MOLECULAR-BEAM EPITAXY [J].

PETROFF, PM ;

WEISBUCH, C ;

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WIEGMANN, W .

APPLIED PHYSICS LETTERS, 1981, 38 (12) :965-967

[6]

PLOOG K, 1982, J APPL PHYS, V53, P999

[7] A PHOTO-LUMINESCENCE STUDY OF BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY [J].

SCOTT, GB ;

DUGGAN, G ;

DAWSON, P ;

WEIMANN, G .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) :6888-6894

[8] CARBON IN MOLECULAR-BEAM EPITAXIAL GAAS [J].

STRINGFELLOW, GB ;

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KOSCHEL, W .

APPLIED PHYSICS LETTERS, 1981, 38 (03) :156-157

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