A PHOTO-LUMINESCENCE STUDY OF BERYLLIUM-DOPED GAAS GROWN BY MOLECULAR-BEAM EPITAXY

被引:41
作者
SCOTT, GB [1 ]
DUGGAN, G [1 ]
DAWSON, P [1 ]
WEIMANN, G [1 ]
机构
[1] FORSCHUNGSINST DEUTSCH BUNDESPOST,D-6100 DARMSTADT,FED REP GER
关键词
D O I
10.1063/1.328640
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:6888 / 6894
页数:7
相关论文
共 28 条
[1]   ELECTRON LIFETIME AND DIFFUSION CONSTANT IN GERMANIUM-DOPED GALLIUM-ARSENIDE [J].
ACKET, GA ;
NIJMAN, W ;
LAM, HT .
JOURNAL OF APPLIED PHYSICS, 1974, 45 (07) :3033-3040
[2]   INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].
ASHEN, DJ ;
DEAN, PJ ;
HURLE, DTJ ;
MULLIN, JB ;
WHITE, AM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053
[3]  
Beattie A.R., 1958, P R SOC LOND, V249, P16
[4]   APPLICATION OF MOLECULAR-BEAM EPITAXIAL LAYERS TO HETEROSTRUCTURE LASERS [J].
CASEY, HC ;
CHO, AY ;
BARNES, PA .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1975, QE11 (07) :467-470
[5]   MAGNESIUM-DOPED GAAS AND ALXGA1-XAS BY MOLECULAR-BEAM EPITAXY [J].
CHO, AY ;
PANISH, MB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (12) :5118-5123
[6]  
CLEGG JG, COMMUNICATION
[7]   RADIATIVE RECOMBINATION FROM GAAS DIRECTLY EXCITED BY ELECTRON BEAMS [J].
CUSANO, DA .
SOLID STATE COMMUNICATIONS, 1964, 2 (11) :353-358
[8]   INVESTIGATION OF SURFACE RECOMBINATION ON EPITAXIAL GAAS FILMS [J].
DMITRUK, NL ;
LYASHENK.VI ;
TERESHEN.AK ;
SPEKTOR, SA .
PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1973, 20 (01) :53-62
[9]   THE EFFICIENCY OF PHOTO-LUMINESCENCE OF THIN EPITAXIAL SEMICONDUCTORS [J].
DUGGAN, G ;
SCOTT, GB .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :407-411