INGAASP/INP SEPARATED MULTICLAD LAYER STRIPE GEOMETRY LASER EMITTING AT 1.5-MU-M WAVELENGTH

被引：1

作者：

IMAI, H ^{[1
]}

ISHIKAWA, H ^{[1
]}

TANAHASHI, T ^{[1
]}

HORI, KI ^{[1
]}

机构：

[1] FUJITSU LABS LTD,ATSUGI 24301,JAPAN

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 1983年 / 19卷 / 06期

关键词：

D O I：

10.1109/JQE.1983.1071959

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1063 / 1067

页数：5

共 24 条

[1] ROOM-TEMPERATURE CW OPERATION OF INGAASP-INP HETEROSTRUCTURE LASERS EMITTING AT 1-56 MU-M
AKIBA, S
SAKAI, K
MATSUSHIMA, Y
YAMAMOTO, T
[J]. ELECTRONICS LETTERS, 1979, 15 (19) : 606 - 607
[2] CONDITIONS OF LPE GROWTH FOR LATTICE MATCHED GAINASP-INP DH LASERS WITH (100) SUBSTRATE IN RANGE OF 1.2-1.5-MU-M
ARAI, S
ITAYA, Y
SUEMATSU, Y
KISHINO, K
KATAYAMA, S
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS, 1978, 17 (11) : 2067 - 2068
[3] CALCULATION OF SEPARATED MULTICLAD-LAYER STRIPE GEOMETRY LASER MODES
CHINN, SR
SPIERS, RJ
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (06) : 984 - 991
[4] TEMPERATURE-DEPENDENCE OF THRESHOLD CURRENT FOR DOUBLE-HETEROJUNCTION LASERS
ETTENBERG, M
NUESE, CJ
KRESSEL, H
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2949 - 2950
[5] LOW-THRESHOLD (GA, IN) (AS, P) DH LASERS EMITTING AT 1.55 MU-M GROWN BY LPE
HENSHALL, GD
GREENE, PD
[J]. ELECTRONICS LETTERS, 1979, 15 (20) : 621 - 622
[6] HIGH-TEMPERATURE CW OPERATION OF GAINASP-INP LASERS EMITTING AT 1.5 MU-M
HSIEH, JJ
[J]. APPLIED PHYSICS LETTERS, 1980, 37 (01) : 25 - 27
[7] ACCELERATED AGING TEST OF INGAASP-INP DOUBLE-HETEROSTRUCTURE LASER-DIODES WITH SINGLE TRANSVERSE-MODE
IMAI, H
MORIMOTO, M
ISHIKAWA, H
HORI, K
TAKUSAGAWA, M
WAKITA, K
FUKUDA, M
IWANE, G
[J]. APPLIED PHYSICS LETTERS, 1981, 38 (01) : 16 - 17
[8] INGAASP-INP SEPARATED MULTICLAD LAYER STRIPE GEOMETRY LASERS EMITTING AT 1.5 UM
IMAI, H
ISHIKAWA, H
TANAHASHI, T
TAKUSAGAWA, M
[J]. ELECTRONICS LETTERS, 1981, 17 (01) : 17 - 19
[9] SEPARATED MULTICLAD-LAYER STRIPE-GEOMETRY GAALAS DH LASER
ISHIKAWA, H
HANAMITSU, K
TAKAGI, N
FUJIWARA, T
TAKUSAGAWA, M
[J]. IEEE JOURNAL OF QUANTUM ELECTRONICS, 1981, 17 (07) : 1226 - 1234
[10] ISHIKAWA H, 1982, APPL PHYS LETT, V40, P533

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