BIAS CONTROL OF LONG-TERM RADIATION-INDUCED TRANSIENTS IN GAAS-MESFETS

被引：2

作者：

CASEY, RH

HERMAN, WN

LACOMBE, DJ

RAGONESE, LJ

IMMORLICA, A

ANDERSON, WT

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

[2] GE,ELECTR LAB,SYRACUSE,NY 13201

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1988年 / 35卷 / 06期

关键词：

D O I：

10.1109/23.25478

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1444 / 1450

页数：7

共 14 条

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[3]

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[4]

BLUM AS, 1985, IEEE ELECTRON DEVICE, V6

[5]

Flesner L. D., 1983, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1983, P129

[6] TRANSIENT RADIATION EFFECTS IN GAAS DEVICES - BULK CONDUCTION AND CHANNEL MODULATION PHENOMENA IN D-MESFET, E-JFET, AND N+-SI-N+ STRUCTURES [J].

FLESNER, LD .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1502-1507

[7] BACKGATING IN GAAS-MESFETS [J].

KOCOT, C ;

STOLTE, CA .

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[8]

LISTVAN MA, 1987, IEEE T NUCL SCI, V34, P1664

[9]

RAGONESE LJ, 1987 GAAS REL WORKSH

[10] LONG-TERM RADIATION TRANSIENTS IN GAAS-FETS [J].

SIMONS, M ;

KING, EE .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1979, 26 (06) :5080-5086

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