TEMPERATURE-DEPENDENCE OF THE ENERGY-GAP OF INSB USING NONLINEAR OPTICAL TECHNIQUES

被引：62

作者：

LITTLER, CL ^{[1
]}

SEILER, DG ^{[1
]}

机构：

[1] N TEXAS STATE UNIV,CTR APPL QUANTUM ELECTR,DEPT PHYS,DENTON,TX 76203

来源：

关键词：

D O I：

10.1063/1.95789

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：986 / 988

页数：3

共 11 条

[1] TEMPERATURE-DEPENDENCE OF BAND-STRUCTURE OF GERMANIUM-TYPE AND ZINCBLENDE-TYPE SEMICONDUCTORS
AUVERGNE, D
CAMASSEL, J
MATHIEU, H
CARDONA, M
[J]. PHYSICAL REVIEW B, 1974, 9 (12): : 5168 - 5177
[2] TEMPERATURE-DEPENDENCE OF FUNDAMENTAL EDGE OF GERMANIUM AND ZINCBLENDE-TYPE SEMICONDUCTORS
CAMASSEL, J
AUVERGNE, D
[J]. PHYSICAL REVIEW B, 1975, 12 (08): : 3258 - 3267
[3] INTRA-CONDUCTION-BAND MAGNETO-OPTICAL STUDIES OF INSB
GOODWIN, MW
SEILER, DG
[J]. PHYSICAL REVIEW B, 1983, 27 (06): : 3451 - 3459
[4] 2-PHOTON MAGNETOABSORPTION SPECTROSCOPY IN N-INSB WITH CW CO2-LASERS
GOODWIN, MW
SEILER, DG
WEILER, MH
[J]. PHYSICAL REVIEW B, 1982, 25 (10): : 6300 - 6309
[5] HIGH-RESOLUTION MAGNETO-OPTICAL STUDIES OF FREE AND BOUND HOLES IN P-TYPE INSB
LITTLER, CL
SEILER, DG
KAPLAN, R
WAGNER, RJ
[J]. PHYSICAL REVIEW B, 1983, 27 (12): : 7473 - 7488
[6] 2-PHOTON RESONANT PHOTO-HALL EFFECT IN N-INSB
LITTLER, CL
SEILER, DG
MCCLURE, SW
[J]. SOLID STATE COMMUNICATIONS, 1984, 50 (06) : 565 - 569
[7] MADELUNG O, 1982, NUMERICAL DATA FUN A, V17
[8] Roberts V., 1955, J ELECTRONICS, V1, P152
[9] 2-PHOTON MAGNETOSPECTROSCOPY OF A-EXCITON STATES IN CDS
SEILER, DG
HEIMAN, D
FEIGENBLATT, R
AGGARWAL, RL
LAX, B
[J]. PHYSICAL REVIEW B, 1982, 25 (12): : 7666 - 7677
[10] TEMPERATURE DEPENDENCE OF ENERGY GAP IN SEMICONDUCTORS
VARSHNI, YP
[J]. PHYSICA, 1967, 34 (01): : 149 - &