TIME-RESOLVED PHOTOLUMINESCENCE IN ANODICALLY ETCHED SILICON

被引：25

作者：

PEARSALL, TP ^{[1
]}

ADAMS, JC ^{[1
]}

WU, JE ^{[1
]}

NOSHO, BZ ^{[1
]}

AW, C ^{[1
]}

PATTON, JC ^{[1
]}

机构：

[1] BOEING CO,DEF & SPACE GRP,SEATTLE,WA 98124

来源：

JOURNAL OF APPLIED PHYSICS | 1992年 / 71卷 / 09期

关键词：

D O I：

10.1063/1.350790

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We have studied the time response of visible, red photoluminescence in anodically etched p- silicon films. The principal features of our measurements are luminescence with two wavelength components, and a temperature dependent rise time of 24-mu-s and a decay time of 47-mu-s at room temperature. Results from our samples show some similarities to characteristics measured in amorphous Si, suggesting that some low-dimensional or disordered Si phase may play a role in the observation of visible light from this new photonic material.

引用

页码：4470 / 4474

页数：5

共 24 条

[1]

ABELES B, 1984, SEMICONDUCT SEMIMET, V21, P407

[2] STRAIN IN POROUS SI FORMED ON A SI (100) SUBSTRATE [J].