PREPARATION PHYSICAL STRUCTURE RELATIONS IN SIC SPUTTERED FILMS

[11] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 138 - 143

[12] STRUCTURES AND PHYSICAL-PROPERTIES OF SPUTTERED AMORPHOUS SIC FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 249 - 260

[13] REVISED STRUCTURE ZONE MODEL FOR THIN-FILM PHYSICAL STRUCTURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 500 - 503

[14] EVOLUTION OF MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6220 - 6225

[15] PREPARATION AND PROPERTIES OF NONCRYSTALLINE SILICON CARBIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3640 - &

[16] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305

[17] MOVCHAN BA, 1969, PHYS METALS METALLOG, V28, P83

[18] ELECTRO-LUMINESCENCE IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 432 - 434

[19] NIEBERDING WC, 1983, RES DEV, V25, P148

[20] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680

[11] HETEROEPITAXIAL GROWTH OF BETA-SIC ON SILICON SUBSTRATE USING SICL4-C3H8-H2 SYSTEM [J]. JOURNAL OF CRYSTAL GROWTH, 1978, 45 (01) : 138 - 143

[12] STRUCTURES AND PHYSICAL-PROPERTIES OF SPUTTERED AMORPHOUS SIC FILMS [J]. JOURNAL OF ELECTRONIC MATERIALS, 1979, 8 (03) : 249 - 260

[13] REVISED STRUCTURE ZONE MODEL FOR THIN-FILM PHYSICAL STRUCTURE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1984, 2 (02): : 500 - 503

[14] EVOLUTION OF MICROSTRUCTURE IN AMORPHOUS HYDROGENATED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (09) : 6220 - 6225

[15] PREPARATION AND PROPERTIES OF NONCRYSTALLINE SILICON CARBIDE FILMS [J]. JOURNAL OF APPLIED PHYSICS, 1968, 39 (08) : 3640 - &

[16] DEFECTS IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY-FILMS PREPARED BY GLOW-DISCHARGE DECOMPOSITION AND SPUTTERING [J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) : 7299 - 7305

[17] MOVCHAN BA, 1969, PHYS METALS METALLOG, V28, P83

[18] ELECTRO-LUMINESCENCE IN HYDROGENATED AMORPHOUS SILICON-CARBON ALLOY [J]. APPLIED PHYSICS LETTERS, 1983, 42 (05) : 432 - 434

[19] NIEBERDING WC, 1983, RES DEV, V25, P148

[20] CHEMICAL VAPOR-DEPOSITION OF SINGLE CRYSTALLINE BETA-SIC FILMS ON SILICON SUBSTRATE WITH SPUTTERED SIC INTERMEDIATE LAYER [J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1980, 127 (12) : 2674 - 2680