MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE SILICON

[1] ANDRIANOV DG, 1964, FIZ TVERD TELA, V6, P470

[2] ANDRIANOV DG, 1964, FIZ TVERD TELA, V6, P2825

[3] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[4] DC MAGNETOCONDUCTIVITY AND ENERGY BAND STRUCTURE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1757 - 1763

[5] ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3291 - &

[6] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &

[7] DINGLE RB, 1955, PHILOS MAG, V46, P831

[8] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[9] FISTUL VI, 1964, 1964 P INT C PHYS SE, P371

[10] MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (04) : 630 - &

[1] ANDRIANOV DG, 1964, FIZ TVERD TELA, V6, P470

[2] ANDRIANOV DG, 1964, FIZ TVERD TELA, V6, P2825

[3] CONDUCTIVITY MOBILITIES OF ELECTRONS AND HOLES IN HEAVILY DOPED SILICON [J]. PHYSICAL REVIEW, 1957, 108 (06): : 1416 - 1419

[4] DC MAGNETOCONDUCTIVITY AND ENERGY BAND STRUCTURE IN SEMICONDUCTORS [J]. PHYSICAL REVIEW, 1957, 105 (06): : 1757 - 1763

[5] ELECTRICAL PROPERTIES OF HEAVILY DOPED SILICON [J]. JOURNAL OF APPLIED PHYSICS, 1963, 34 (11) : 3291 - &

[6] HIGH-STRESS PIEZORESISTANCE AND MOBILITY IN DEGENERATE SB-DOPED GERMANIUM [J]. PHYSICAL REVIEW, 1965, 137 (6A): : 1847 - &

[7] DINGLE RB, 1955, PHILOS MAG, V46, P831

[8] A NEW DEVICE USING THE TUNNELING PROCESS IN NARROW P-N JUNCTIONS [J]. SOLID-STATE ELECTRONICS, 1960, 1 (01) : 13 - &

[9] FISTUL VI, 1964, 1964 P INT C PHYS SE, P371

[10] MAGNETORESISTANCE IN HEAVILY DOPED N-TYPE GERMANIUM [J]. JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1962, 17 (04) : 630 - &