KINETICS OF PLASMA DEPOSITION OF A-SI-H FILMS

被引：6

作者：

HOTTA, S ^{[1
]}

OKAMOTO, H ^{[1
]}

HAMAKAWA, Y ^{[1
]}

机构：

[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1983年 / 22卷 / 09期

关键词：

D O I：

10.1143/JJAP.22.L562

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L562 / L564

页数：3

共 12 条

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[6] EFFECTS OF THE SUBSTRATE POTENTIAL ON THE INCORPORATION MANNER OF HYDROGEN AND IMPURITY IN ALPHA-SI-H FILMS [J].

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[7] OPTIMIZATION OF GD A-SI-H FILM PROPERTY FOR PHOTO-VOLTAIC DEVICE BY MEANS OF THE CROSS FIELD PLASMA DEPOSITION TECHNIQUE [J].

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