A STRAINED-LAYER INGAAS-GAAS-ALGAAS SINGLE-QUANTUM-WELL BROAD-SPECTRUM LED BY SELECTIVE-AREA METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：13

作者：

OSOWSKI, ML

COCKERILL, TM

LAMMERT, RM

FORBES, DV

ACKLEY, DE

COLEMAN, JJ

机构：

[1] Microelectronics Laboratory, Materials Research Laboratory, University of Illinois, Urbana, IL

来源：

IEEE PHOTONICS TECHNOLOGY LETTERS | 1994年 / 6卷 / 11期

基金：

美国国家科学基金会;

关键词：

D O I：

10.1109/68.334816

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Three-step selective area metalorganic chemical vapor deposition is used to fabricate strained layer InGaAs-GaAs-AlGaAs single quantum well broad spectrum LEDs. We have fabricated a device with a continuous variation in quantum well thickness along its length by using a tapered oxide width mask for the active region regrowth. A spectral emission width of 80 nm is obtained.

引用

收藏

页码：1289 / 1292

页数：4

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