BLUE EMISSION IN POROUS SILICON - OXYGEN-RELATED PHOTOLUMINESCENCE

被引：322

作者：

TSYBESKOV, L

VANDYSHEV, JV

FAUCHET, PM

机构：

[1] Department of Electrical Engineering, University of Rochester, Rochester

来源：

PHYSICAL REVIEW B | 1994年 / 49卷 / 11期

关键词：

D O I：

10.1103/PhysRevB.49.7821

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

A blue-photoluminescence (PL) band, centered at 2.6 eV, was observed in thermally and chemically oxidized light-emitting porous silicon layers with an efficiency that can exceed 0.1%. The PL decay is found to be independent of excitation intensity and detection wavelength, and to be nonexponential with a characteristic time of approximately 1 nsec. A correlation between the intensity of the blue PL and the intensity of the infrared absorption related to bonded oxygen has been established. These results are examined in relation to the possible mechanisms for the blue-PL band.

引用

页码：7821 / 7824

页数：4

共 21 条

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