EXTREME DAMAGE EVENTS PRODUCED BY SINGLE PARTICLES

被引：9

作者：

BURKE, EA ^{[1
]}

SUMMERS, GP ^{[1
]}

机构：

[1] USN,RES LAB,WASHINGTON,DC 20375

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/TNS.1987.4337518

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1575 / 1579

页数：5

共 10 条

[1]

BURKE EA, 1981, IEEE T NUCL SCI, V28, P4068

[2]

Everitt B, 1981, FINITE MIXTURE DISTR

[3]

KALMA A, COMMUNICATION

[4]

Parzen E., 1962, STOCHASTIC PROCESSES

[5] EFFECTS OF SINGLE NEUTRON INTERACTIONS IN SILICON INTEGRATED-CIRCUITS [J].

SROUR, JR ;

HARTMANN, RA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1985, 32 (06) :4195-4200

[6] PERMANENT DAMAGE PRODUCED BY SINGLE PROTON INTERACTIONS IN SILICON DEVICES [J].

SROUR, JR ;

HARTMANN, RA ;

KITAZAKI, KS .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1986, 33 (06) :1597-1604

[7]

SUMMERS GP, 1987, JUL IEEE C NUCL SPAC

[8]

Taylor H., 1984, INTRO STOCHASTIC MOD

[9] SCALING OF GAMMA-DOSE RATE UPSET THRESHOLD IN HIGH-DENSITY MEMORIES [J].

VAIL, PJ ;

BURKE, EA ;

RAYMOND, JP .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1983, 30 (06) :4240-4245

[10] FUNDAMENTAL LIMITS IMPOSED BY GAMMA-DOSE FLUCTUATIONS IN SCALED MOS GATE INSULATORS [J].

VAIL, PJ ;

BURKE, EA .

IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1984, 31 (06) :1411-1416

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