EFFECTS OF SINGLE NEUTRON INTERACTIONS IN SILICON INTEGRATED-CIRCUITS

被引：27

作者：

SROUR, JR

HARTMANN, RA

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1985年 / 32卷 / 06期

关键词：

D O I：

10.1109/TNS.1985.4334093

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：4195 / 4200

页数：6

共 11 条

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[8] PERMANENT DAMAGE INTRODUCED BY SINGLE PARTICLES INCIDENT ON SILICON DEVICES [J].

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[9] NEUTRON DAMAGE MECHANISMS IN CHARGE-TRANSFER DEVICES [J].

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[10] TRANSIENT AND PERMANENT EFFECTS OF NEUTRON BOMBARDMENT ON A COMMERCIALLY AVAILABLE N-BURIED-CHANNEL CCD [J].

SROUR, JR ;

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