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TRANSIENT AND PERMANENT EFFECTS OF NEUTRON BOMBARDMENT ON A COMMERCIALLY AVAILABLE N-BURIED-CHANNEL CCD
被引:24
作者
:
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
SROUR, JR
HARTMANN, RA
论文数:
0
引用数:
0
h-index:
0
HARTMANN, RA
OTHMER, S
论文数:
0
引用数:
0
h-index:
0
OTHMER, S
机构
:
来源
:
IEEE TRANSACTIONS ON NUCLEAR SCIENCE
|
1980年
/ 27卷
/ 06期
关键词
:
D O I
:
10.1109/TNS.1980.4331041
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:1402 / 1410
页数:9
相关论文
共 23 条
[1]
ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1
[2]
RAPID ANNEALING IN N-TYPE SILICON FOLLOWING PULSED 10 MEV ELECTRON IRRADIATION
[J].
ARIMURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Boeing Radiation Effects Laboratory, Boeing Company, Seattle
ARIMURA, I
;
FREEMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
Boeing Radiation Effects Laboratory, Boeing Company, Seattle
FREEMAN, RR
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(06)
:2570
-+
[3]
THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
[J].
BRAUN, S
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
BRAUN, S
;
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
GRIMMEISS, HG
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(06)
:2789
-2794
[4]
ELECTRON DRIFT VELOCITY IN SILICON
[J].
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
CANALI, C
;
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
JACOBONI, C
;
NAVA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
NAVA, F
;
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
OTTAVIANI, G
;
ALBERIGIQUARANTA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
ALBERIGIQUARANTA, A
.
PHYSICAL REVIEW B,
1975,
12
(06)
:2265
-2284
[5]
RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICON
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
CURTIS, OL
;
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
SROUR, JR
;
RAUCH, RB
论文数:
0
引用数:
0
h-index:
0
RAUCH, RB
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(11)
:4638
-+
[6]
STATISTICS OF CARRIER RECOMBINATION AT DISORDERED REGIONS IN SEMICONDUCTORS
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
CURTIS, OL
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(07)
:3109
-+
[7]
RECOMBINATION WITHIN DISORDERED REGIONS - INFLUENCE OF BARRIER HEIGHT ON RECOMBINATION RATE AND INJECTION LEVEL EFFECTS
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
CURTIS, OL
;
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
SROUR, JR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
:196
-203
[8]
DYCK RH, COMMUNICATION
[9]
MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON
[J].
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories Albuquerque
GREGORY, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
:53
-+
[10]
NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS
[J].
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
GREGORY, BL
;
NAIK, SS
论文数:
0
引用数:
0
h-index:
0
NAIK, SS
;
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
:50
-+
←
1
2
3
→
共 23 条
[1]
ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1
[2]
RAPID ANNEALING IN N-TYPE SILICON FOLLOWING PULSED 10 MEV ELECTRON IRRADIATION
[J].
ARIMURA, I
论文数:
0
引用数:
0
h-index:
0
机构:
Boeing Radiation Effects Laboratory, Boeing Company, Seattle
ARIMURA, I
;
FREEMAN, RR
论文数:
0
引用数:
0
h-index:
0
机构:
Boeing Radiation Effects Laboratory, Boeing Company, Seattle
FREEMAN, RR
.
JOURNAL OF APPLIED PHYSICS,
1969,
40
(06)
:2570
-+
[3]
THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION
[J].
BRAUN, S
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
BRAUN, S
;
GRIMMEISS, HG
论文数:
0
引用数:
0
h-index:
0
机构:
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
LUND INST TECHNOL, DEPT SOLID STATE PHYS, LUND 7, SWEDEN
GRIMMEISS, HG
.
JOURNAL OF APPLIED PHYSICS,
1973,
44
(06)
:2789
-2794
[4]
ELECTRON DRIFT VELOCITY IN SILICON
[J].
CANALI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
CANALI, C
;
JACOBONI, C
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
JACOBONI, C
;
NAVA, F
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
NAVA, F
;
OTTAVIANI, G
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
OTTAVIANI, G
;
ALBERIGIQUARANTA, A
论文数:
0
引用数:
0
h-index:
0
机构:
UNIV MODENA, IST FIS, MODENA, ITALY
UNIV MODENA, IST FIS, MODENA, ITALY
ALBERIGIQUARANTA, A
.
PHYSICAL REVIEW B,
1975,
12
(06)
:2265
-2284
[5]
RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICON
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
CURTIS, OL
;
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
SROUR, JR
;
RAUCH, RB
论文数:
0
引用数:
0
h-index:
0
RAUCH, RB
.
JOURNAL OF APPLIED PHYSICS,
1972,
43
(11)
:4638
-+
[6]
STATISTICS OF CARRIER RECOMBINATION AT DISORDERED REGIONS IN SEMICONDUCTORS
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
CURTIS, OL
.
JOURNAL OF APPLIED PHYSICS,
1968,
39
(07)
:3109
-+
[7]
RECOMBINATION WITHIN DISORDERED REGIONS - INFLUENCE OF BARRIER HEIGHT ON RECOMBINATION RATE AND INJECTION LEVEL EFFECTS
[J].
CURTIS, OL
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
CURTIS, OL
;
SROUR, JR
论文数:
0
引用数:
0
h-index:
0
机构:
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
NORTHROP RES & TECHNOL CTR, HAWTHORNE, CA 90250 USA
SROUR, JR
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1973,
NS20
(06)
:196
-203
[8]
DYCK RH, COMMUNICATION
[9]
MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON
[J].
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
机构:
Sandia Laboratories Albuquerque
GREGORY, BL
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1969,
NS16
(06)
:53
-+
[10]
NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS
[J].
GREGORY, BL
论文数:
0
引用数:
0
h-index:
0
GREGORY, BL
;
NAIK, SS
论文数:
0
引用数:
0
h-index:
0
NAIK, SS
;
OLDHAM, WG
论文数:
0
引用数:
0
h-index:
0
OLDHAM, WG
.
IEEE TRANSACTIONS ON NUCLEAR SCIENCE,
1971,
NS18
(06)
:50
-+
←
1
2
3
→