TRANSIENT AND PERMANENT EFFECTS OF NEUTRON BOMBARDMENT ON A COMMERCIALLY AVAILABLE N-BURIED-CHANNEL CCD

被引:24
作者
SROUR, JR
HARTMANN, RA
OTHMER, S
机构
关键词
D O I
10.1109/TNS.1980.4331041
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:1402 / 1410
页数:9
相关论文
共 23 条
[1]  
ABAKUMOV VN, 1978, SOV PHYS SEMICOND+, V12, P1
[2]   RAPID ANNEALING IN N-TYPE SILICON FOLLOWING PULSED 10 MEV ELECTRON IRRADIATION [J].
ARIMURA, I ;
FREEMAN, RR .
JOURNAL OF APPLIED PHYSICS, 1969, 40 (06) :2570-+
[3]   THERMAL AND OPTICAL GENERATION CURRENT IN REVERSE-BIASED GOLD-DOPED SILICON P+N JUNCTIONS WITHOUT DEPLETION APPROXIMATION [J].
BRAUN, S ;
GRIMMEISS, HG .
JOURNAL OF APPLIED PHYSICS, 1973, 44 (06) :2789-2794
[4]   ELECTRON DRIFT VELOCITY IN SILICON [J].
CANALI, C ;
JACOBONI, C ;
NAVA, F ;
OTTAVIANI, G ;
ALBERIGIQUARANTA, A .
PHYSICAL REVIEW B, 1975, 12 (06) :2265-2284
[5]   RECOMBINATION STUDIES ON GAMMA-IRRADIATED N-TYPE SILICON [J].
CURTIS, OL ;
SROUR, JR ;
RAUCH, RB .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (11) :4638-+
[6]   STATISTICS OF CARRIER RECOMBINATION AT DISORDERED REGIONS IN SEMICONDUCTORS [J].
CURTIS, OL .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (07) :3109-+
[7]   RECOMBINATION WITHIN DISORDERED REGIONS - INFLUENCE OF BARRIER HEIGHT ON RECOMBINATION RATE AND INJECTION LEVEL EFFECTS [J].
CURTIS, OL ;
SROUR, JR .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1973, NS20 (06) :196-203
[8]  
DYCK RH, COMMUNICATION
[9]   MINORITY CARRIER RECOMBINATION IN NEUTRON IRRADIATED SILICON [J].
GREGORY, BL .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1969, NS16 (06) :53-+
[10]   NEUTRON PRODUCED TRAPPING CENTERS IN JUNCTION FIELD EFFECT TRANSISTORS [J].
GREGORY, BL ;
NAIK, SS ;
OLDHAM, WG .
IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 1971, NS18 (06) :50-+