SHORT-TERM ANNEALING IN SILICON DEVICES FOLLOWING PULSED 14-MEV NEUTRON-IRRADIATION

被引:19
作者
SROUR, JR [1 ]
CURTIS, OL [1 ]
机构
[1] NORTHROP CORP LABS, HOWTHORNE, CA 90250 USA
关键词
D O I
10.1109/TNS.1972.4326859
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:362 / 370
页数:9
相关论文
共 35 条
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SANDER, HH .
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