EFFECTS OF METASTABLE CHARGE STATES ON SHORT-TERM ANNEALING IN P-TYPE SILICON

被引：2

作者：

CURTIS, OL

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1970年 / NS17卷 / 06期

关键词：

D O I：

10.1109/TNS.1970.4325775

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：105 / +

页数：1

共 21 条

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[4]

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[8] INJECTION-STIMULATED VACANCY REORDERING IN P-TYPE SILICON AT 76DEGREESK [J].

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[9] INJECTION DEPENDENCE OF TRANSIENT ANNEALING IN NEUTRON-IRRADIATED SILICON DEVICES [J].

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[10]

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