A SELF-ALIGNED ENHANCEMENT-MODE ALGAAS/INP MISFET

被引：3

作者：

DELALAMO, JA

MIZUTANI, T

机构：

来源：

IEEE ELECTRON DEVICE LETTERS | 1987年 / 8卷 / 05期

关键词：

D O I：

10.1109/EDL.1987.26609

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：220 / 222

页数：3

共 16 条

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[5] HETEROSTRUCTURE GATES FOR ENHANCEMENT-MODE INGAAS FETS [J].

FEUER, MD ;

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[6]

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[7] ON THE ELECTRICAL-PROPERTIES OF COMPOUND SEMICONDUCTOR INTERFACES IN METAL-INSULATOR SEMICONDUCTOR STRUCTURES AND THE POSSIBLE ORIGIN OF INTERFACE STATES [J].

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THIN SOLID FILMS, 1983, 103 (1-2) :119-140

[8] X-BAND SELF-ALIGNED GATE ENHANCEMENT-MODE INP MISFETS [J].

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OHATA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1983, 30 (07) :811-815

[9]

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[10]

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