TRANSITION-METAL DIFFUSION IN INP - PHOTOLUMINESCENCE INVESTIGATION

被引：33

作者：

SKOLNICK, MS ^{[1
]}

FOULKES, EJ ^{[1
]}

TUCK, B ^{[1
]}

机构：

[1] UNIV NOTTINGHAM,DEPT ELECT & ELECTR ENGN,NOTTINGHAM NG7 2RD,ENGLAND

来源：

JOURNAL OF APPLIED PHYSICS | 1984年 / 55卷 / 08期

关键词：

D O I：

10.1063/1.333338

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2951 / 2961

页数：11

共 46 条

[31] INVESTIGATION OF PROCESS-INDUCED DEFECTS IN INP [J].

RAO, EVK ;

SIBILLE, A ;

DUHAMEL, N .

PHYSICA B & C, 1983, 116 (1-3) :449-455

[32]

RAO EVK, 1982, INT C DEFECTS SEMICO

[33]

SIBILLE A, 1982, 16TH P INT C PHYS SE

[34]

SIBILLE A, 1982, PHYSICA B, V117, P176

[35] OPTICAL-PROPERTIES OF COPPER-RELATED CENTERS IN INP [J].

SKOLNICK, MS ;

DEAN, PJ ;

PITT, AD ;

UIHLEIN, C ;

KRATH, H ;

DEVEAUD, B ;

FOULKES, EJ .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1983, 16 (10) :1967-1985

[36] DEEP LEVELS IN CO-DOPED INP [J].

SKOLNICK, MS ;

TAPSTER, PR ;

DEAN, PJ ;

HUMPHREYS, RG ;

COCKAYNE, B ;

MACEWAN, WR ;

NORAS, JM .

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS, 1982, 15 (15) :3333-3358

[37] PHOTO-LUMINESCENCE OF CHROMIUM DOPED AND CHROMIUM DIFFUSED GAAS [J].

SKOLNICK, MS ;

BROZEL, MR ;

TUCK, B .

SOLID STATE COMMUNICATIONS, 1982, 43 (05) :379-384

[38] DEEP RADIATIVE LEVELS IN INP [J].

TEMKIN, H ;

DUTT, BV ;

BONNER, WA ;

KERAMIDAS, VG .

JOURNAL OF APPLIED PHYSICS, 1982, 53 (11) :7526-7533

[39] PHOTO-LUMINESCENCE STUDY OF MELT GROWN INP [J].

TEMKIN, H ;

BONNER, WA .

JOURNAL OF APPLIED PHYSICS, 1981, 52 (01) :397-401

[40]

TEMKIN H, 1982, UNPUB NOV P MAT RES

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