EFFECT OF MISFIT STRAIN ON PHYSICAL-PROPERTIES OF INGAP GROWN BY METALORGANIC MOLECULAR-BEAM EPITAXY

被引：36

作者：

OZASA, K

YURI, M

TANAKA, S

MATSUNAMI, H

机构：

[1] Department of Electrical Engineering, Kyoto University, Sakyo-ku, Kyoto 606, Yoshidahonmachi

来源：

JOURNAL OF APPLIED PHYSICS | 1990年 / 68卷 / 01期

关键词：

D O I：

10.1063/1.347100

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The effects of misfit strain on physical properties (lattice parameters, photoluminescence, and electron mobility) are discussed for In 1-xGaxP epilayers with a constant thickness of around 0.75 μm grown by metalorganic molecular-beam epitaxy on GaAs(001) substrates. The elastic accommodation of misfit strain is observed in the analysis of lattice parameters and energy-band-gap shift. Tensile strain is relaxed more easily than the compressive strain. Theoretical predictions of critical thickness for elastic-strain accommodation and of energy-band-gap shift agree well with experimental results. The energy-band-gap shift and electron mobility are relatively insensitive to dislocations generated by relaxation of the misfit strain.

引用

页码：107 / 111

页数：5

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