TITANIUM NITRIDE FILMS WITH HIGH OXYGEN CONCENTRATION

被引：10

作者：

ANG, SS

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1988年 / 17卷 / 02期

关键词：

D O I：

10.1007/BF02652136

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：95 / 100

页数：6

共 9 条

[1]

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[4]

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[7] OXYGEN IN TITANIUM NITRIDE DIFFUSION-BARRIERS [J].

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[8] HIGH-TEMPERATURE CONTACT STRUCTURES FOR SILICON SEMICONDUCTOR-DEVICES [J].

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[9] INTERFACIAL REACTIONS BETWEEN ALUMINUM AND TRANSITION-METAL NITRIDE AND CARBIDE FILMS [J].

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