THE DEFECT LUMINESCENCE SPECTRUM AT 0.9351 EV IN CARBON-DOPED HEAT-TREATED OR IRRADIATED SILICON

被引：31

作者：

IRION, E

BURGER, N

THONKE, K

SAUER, R

机构：

来源：

JOURNAL OF PHYSICS C-SOLID STATE PHYSICS | 1985年 / 18卷 / 26期

关键词：

D O I：

10.1088/0022-3719/18/26/018

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：5069 / 5082

页数：14

共 16 条

[11] ALUMINUM AND GALLIUM IMPURITY EFFECTS ON PHOTOLUMINESCENCE FROM ELECTRON-IRRADIATED, PULLED SILICON
NOONAN, JR
KIRKPATRICK, CG
STREETMAN, BG
[J]. SOLID STATE COMMUNICATIONS, 1974, 15 (06) : 1055 - 1059
[12] ORIGIN OF THE 1.080EV(I2) PHOTO-LUMINESCENCE LINE IN IRRADIATED SILICON
THONKE, K
WEBER, J
WAGNER, J
SAUER, R
[J]. PHYSICA B & C, 1983, 116 (1-3): : 252 - 257
[13] THONKE K, 1984, J ELECTRON MATER A, V14, P823
[14] THONKE K, 1985, 13TH P INT C DEF SEM
[15] THONKE K, 1985, PHYS REV B
[16] WEBER J, 1983, MATER RES SOC S P, V14, P165