ORIGIN OF THE 1.080EV(I2) PHOTO-LUMINESCENCE LINE IN IRRADIATED SILICON

被引：24

作者：

THONKE, K

WEBER, J

WAGNER, J

SAUER, R

机构：

来源：

PHYSICA B & C | 1983年 / 116卷 / 1-3期

关键词：

D O I：

10.1016/0378-4363(83)90255-3

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

页码：252 / 257

页数：6

共 16 条

[1] EPR OF A [001] SI INTERSTITIAL COMPLEX IN IRRADIATED SILICON [J].

BROWER, KL .

PHYSICAL REVIEW B, 1976, 14 (03) :872-883

[2] ONE PHONON ABSORPTION FROM ALUMINIUM COMPLEXES IN SILICON COMPENSATED BY LITHIUM OR ELECTRON IRRADIATION [J].

DEVINE, SD ;

NEWMAN, RC .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1970, 31 (04) :685-&

[3] CW LASER OPERATION WITH NEW F-2+-TYPE COLOR-CENTERS IN NAF [J].

EISELE, H ;

PAUS, HJ ;

WAGNER, J .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1982, 18 (02) :152-153

[4] LUMINESCENCE OF TRAPS IN ELECTRON-IRRADIATED GALLIUM-DOPED SILICON [J].

ELLIOTT, KR .

PHYSICAL REVIEW B, 1982, 25 (02) :1460-1463

[5]

GISLASON HP, 1982, PHYS REV B, V26, P827, DOI 10.1103/PhysRevB.26.827

[6]

KIMERLING LC, 1977, 1976 P INT C RAD EFF, P221

[7] RECOMBINATION LUMINESCENCE FROM ION-IMPLANTED SILICON [J].

KIRKPATRICK, CG ;

NOONAN, JR ;

STREETMAN, BG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1976, 30 (02) :97-106

[8] DEFECT ENERGY-LEVELS IN BORON-DOPED SILICON IRRADIATED WITH 1-MEV ELECTRONS [J].

MOONEY, PM ;

CHENG, LJ ;

SULI, M ;

GERSON, JD ;

CORBETT, JW .

PHYSICAL REVIEW B, 1977, 15 (08) :3836-3843

[9]

NEWMAN RC, 1973, INFRARED STUDIES CRY, P132

[10] LOW-TEMPERATURE PHOTOLUMINESCENCE FROM BORON ION-IMPLANTED SI [J].

NOONAN, JR ;

KIRKPATRICK, CG ;

STREETMAN, BG .

RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1974, 21 (04) :225-228

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