ADVANTAGES OF USING A PMOS FET DOSIMETER IN HIGH-DOSE RADIATION EFFECTS TESTING

被引：10

作者：

AUGUST, LS

CIRCLE, RR

机构：

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1984年 / 31卷 / 06期

关键词：

D O I：

10.1109/TNS.1984.4333465

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：1113 / 1115

页数：3

相关论文

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