MOLECULAR-BEAM EPITAXIAL-GROWTH OF INGAALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS ON HIGHLY RESISTIVE LOW-TEMPERATURE INALAS EPILAYERS

被引：1

作者：

DODABALAPUR, A ^{[1
]}

CHANG, TY ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 23期

关键词：

D O I：

10.1063/1.108067

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

In0.52Al0.48As epilayers grown by molecular beam epitaxy (MBE) at low temperatures typically possess resistivities of more than 10(5) OMEGA cm. We propose the use of such highly resistive epilayers to vertically isolate different devices on InP substrates. We demonstrate that high performance In0.52Ga0.24Al0.24As/In0.53Ga0.47As heterojunction bipolar transistors can be grown' on top of such high resistivity buffer In0.52Al0.48As layers. Such HBTs have dc current gains of 1000 and emitter-base pn junctions with ideality factors of 1.05. However, the MBE growth conditions required to obtain such good material are quite critical. We describe these conditions and also the electrical properties of both the HBTs and the resistive InAlAs layers.

引用

页码：2796 / 2798

页数：3

共 8 条

[1] PROPERTIES AND APPLICATIONS OF ALXGA1-XAS (0 LESS-THAN-OR-EQUAL-TO X LESS-THAN-OR-EQUAL-TO 1) GROWN AT LOW-TEMPERATURES [J].