HIGH-GAIN INGAALAS/INGAAS HETEROJUNCTION BIPOLAR-TRANSISTORS AND PHOTOTRANSISTORS

被引：11

作者：

DODABALAPUR, A

CHANG, TY

机构：

[1] AT&T Bell Laboratories, Holmdel

来源：

IEEE ELECTRON DEVICE LETTERS | 1991年 / 12卷 / 12期

关键词：

D O I：

10.1109/55.116958

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The characteristics of InGaAlAs/InGaAs heterojunction bipolar transistors (HBT's) grown by molecular beam epitaxy are described. A current gain of 15 600 at a current density of approximately 10(4) A/cm2 and an emitter-base heterojunction ideality factor of 1.02 are measured. Appropriately designed InGaAlAs/InGaAs HBT's, when operated as phototransistors, also have high gains. A current gain of 1000 for a collector current of only 10-mu-A is obtained for phototransistors. Such high gains are due to low recombination currents as a consequence of the good crystalline quality of the InGaAlAs bulk and InGaAlAs/InGaAs interface.

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页码：693 / 695

页数：3

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